Optimization of High Current Xenon Plasma Ion Beams for Applications in Semiconductor Failure Analysis and Development

The introduction of Xenon (Xe) plasma focused ion beam (PFIB) columns in scanning single and dual beam tools are a significant step forward in the development of ion beam instrumentation for scientific and technological exploration. PFIB’s provide significant improvements in ion beam operating currents with as much as 20 times the beam current of conventional Gallium (Ga) Liquid Metal Ion sources (LMIS) and show significant benefits over Ga LMIS sources at currents exceeding 20nA [1]. This substantial increase in beam current makes it possible to perform conventional FIB milling activities in a small fraction of the time previously required. In addition, these advantages have opened up the possibility of using FIB instrumentation in novel applications for FIB sample preparation and macromachining of large structures [2]. Another potential advantage of Xe PFIBs results from the inert nature of Xe as opposed to Ga which could be beneficial in minimizing implant artifacts [3, 4].